論文雑誌「CrystEngComm」のカバーアートを制作しました［室蘭工業大学］
弊社で制作しました室蘭工業大学 葛谷 俊博 先生のカバーアートが
イギリスの王立化学会発行の学術雑誌 CrystEngComm
2021年3月号 Front Coverに選ばれました。
Client
室蘭工業大学
機械航空創造系学科
葛谷 俊博 先生
機械航空創造系学科
葛谷 俊博 先生
Journal
CrystEngComm
21 March 2021, Issue 11 Link
21 March 2021, Issue 11 Link
Growth mechanism of helical γ-Dy2S3 single crystals
R. E. Nikolaev, V. S. Sulyaeva, A. V. Alekseev, A. S. Sukhikh, E. V. Polyakova, T. A. Pomelova,
T. Kuzuya, S. Hirai and B. Tran Nhu
Abstract
Unusual helical single crystals of γ-Dy2S3 were grown from solution by SnS evaporation, and their growth mechanism was investigated. The helical growth of γ-Dy2S3 single crystals is driven by axial screw dislocations, and the crystals grow via the vapor–solid–solid mechanism in the presence of a three-phase interface. Dy2S3 transfers into the vapor phase through a nonequilibrium process owing to simultaneous evaporation of Dy2S3 and SnS. The capture of a nonvolatile component during evaporation is common for solutions comprising volatile and nonvolatile components.
Link
R. E. Nikolaev, V. S. Sulyaeva, A. V. Alekseev, A. S. Sukhikh, E. V. Polyakova, T. A. Pomelova,
T. Kuzuya, S. Hirai and B. Tran Nhu
Abstract
Unusual helical single crystals of γ-Dy2S3 were grown from solution by SnS evaporation, and their growth mechanism was investigated. The helical growth of γ-Dy2S3 single crystals is driven by axial screw dislocations, and the crystals grow via the vapor–solid–solid mechanism in the presence of a three-phase interface. Dy2S3 transfers into the vapor phase through a nonequilibrium process owing to simultaneous evaporation of Dy2S3 and SnS. The capture of a nonvolatile component during evaporation is common for solutions comprising volatile and nonvolatile components.
Link
